The FM25V02A-GTR by Infineon Technologies is a cutting-edge 256-Kbit ferroelectric random access memory (F-RAM) that offers exceptional performance and reliability for a wide range of applications. This memory module is logically organized as 32K × 8, providing ample storage space with the added benefits of NoDelay™ writes for immediate data handling. It boasts an extraordinary endurance of 100 trillion read/write cycles and a data retention period of 151 years, ensuring data integrity over extended periods. The device operates on a very fast serial peripheral interface (SPI) with a frequency of up to 40 MHz, making it a direct hardware replacement for traditional serial flash and EEPROM.
Designed with a sophisticated write-protection scheme, the FM25V02A-GTR includes both hardware protection using the Write Protect (WP) pin and software protection through Write Disable instructions. It also offers software block protection options for 1/4, 1/2, or the entire memory array. The device is highly efficient, consuming only 2.5 mA of current in active mode and as little as 8 µA in sleep mode. It supports low-voltage operation from 2.0 V to 3.6 V and is suitable for industrial environments with temperature ranges from -40°C to +85°C. Available in both 8-pin SOIC and DFN packages, this product is RoHS compliant, adhering to strict environmental standards.
Infineon Technologies FM25V02A-GTR Package Original Label
Nantian Electronics, a professional distributor, stocks this reliable component and provides access to datasheets and pin diagrams for ease of integration into various projects.
