What is the Samsung K4B4G1646E-BYMA?
The K4B4G1646E-BYMA is a 4Gb DDR3L SDRAM memory device designed by Samsung Semiconductor. It provides high-speed data access with reduced operating voltage, making it efficient for systems that need fast and stable memory performance.
What are the key features of this DDR3L SDRAM?
Its main features include low-voltage operation (DDR3L), 4Gb density for ample memory capacity, and a compact 96-FBGA package. It offers reliable data throughput, low power consumption, and strong compatibility with a wide range of designs.
What applications commonly use the K4B4G1646E-BYMA?
This memory device is widely used in consumer electronics, embedded systems, industrial controllers, and communication equipment. It is suitable for applications that require efficient multitasking, stable performance, and compact memory integration.
Why choose DDR3L over standard DDR3?
DDR3L lowers the operating voltage from the typical 1.5V to 1.35V, reducing overall power consumption and heat generation. This makes it ideal for energy-conscious or thermally restricted systems.
Is the K4B4G1646E-BYMA easy to integrate into existing designs?
Yes. Its standardized DDR3L interface and 96-FBGA package make it compatible with many existing circuit designs, allowing engineers to integrate it smoothly without major hardware changes.
Does this part support demanding applications?
Absolutely. Its architecture provides fast data rates and stable performance, making it suitable for workloads involving continuous data access, signal processing, or multitasking operations.
Where can I purchase the K4B4G1646E-BYMA?
Professional distributors such as Nantian Electronics stock this part and provide datasheets, pin diagrams, and technical parameters. You can contact them for quotations, technical support, and order arrangements.
