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IRF7410TRPBF-9803572.jpg0.0000000000 IRF7410TRPBF-9803572.jpg 52135
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International Rectifier IRF7410TRPBF

   
Manufacturer Part Number : IRF7410TRPBF
Manufacturer : International Rectifier
Description : MOSFET MOSFT PCh -12V -16A 7mOhm 91nC
Datasheet : IRF7410TRPBF.PDF IRF7410TRPBF PDF
EDA / CAD Models : IRF7410TRPBF by SnapEDA
Base Product Number : IRF7410
Stock Condition :In Stock 52135, New Original
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1 156 6307034 /datasheets/IntegratedCircuits/IR-IRF7410TRPBF-9803572.pdf ir/irf7410trpbf

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International Rectifier IRF7410TRPBF

In Stock: 52135   Qty:

Introduction to the IRF7410TRPBF from IR (Infineon Technologies)

The IRF7410TRPBF is a high-performance P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by IR (Infineon Technologies). This transistor is designed for use in a wide range of applications, including power management, switching, and motor control. With its robust features and reliable performance, the IRF7410TRPBF is an excellent choice for engineers and designers seeking a high-quality, efficient, and compact transistor solution.

Original IRF7410TRPBF in stock

Original IRF7410TRPBF in stock

As a professional IR distributor, Nantian Electronic has a large number of IRF7410TRPBF in stock. We also provide IRF7410TRPBF parameters, IRF7410TRPBF Datasheet PDF and pin diagram instructions for download.

Key Features and Specifications

  • P-Channel MOSFET technology based on silicon (Si)

  • Surface-mount device (SMD/SMT) packaging in a compact SOIC-8 case

  • Single-channel configuration for simple and efficient design integration

  • High drain-source breakdown voltage (Vds) of 12V for reliable operation in various applications

  • Continuous drain current (Id) of 16A, enabling high current handling capability

  • Low drain-source resistance (Rds On) of 7 mOhms for minimal power loss and efficient operation

  • Wide gate-source voltage (Vgs) range from -8V to +8V, providing flexibility in gate drive design

  • Gate-source threshold voltage (Vgs th) of 1V for precise control and switching

  • Gate charge (Qg) of 91nC for fast switching and low power consumption

  • Wide operating temperature range from -55°C to +150°C, suitable for various environmental conditions

  • Power dissipation (Pd) of 2.5W, ensuring efficient heat management and reliability

  • Enhancement channel mode for simple and efficient gate control

Packaging and Dimensions

The IRF7410TRPBF is available in various packaging options to suit different manufacturing and assembly requirements. These include reel, cut tape, and MouseReel packaging. The compact SOIC-8 package measures 4.9mm in length and 1.75mm in height, making it suitable for space-constrained designs and high-density board layouts.

IRF7410TRPBF Reel Packing

IRF7410TRPBF Reel Packing

Applications and Benefits

The IRF7410TRPBF finds extensive use in a wide range of applications, including:

  • Power management systems

  • Switching power supplies

  • Motor control and driver circuits

  • Battery protection and management

  • Load switching and power distribution

The transistor's high drain-source breakdown voltage and continuous drain current rating ensure reliable operation in demanding environments. The low drain-source resistance minimizes power loss, enhancing overall system efficiency. The wide gate-source voltage range and precise gate-source threshold voltage provide designers with flexibility in gate drive design and enable accurate control over the transistor's switching behavior.

Reliability and Performance

IR (Infineon Technologies) is known for producing high-quality and reliable semiconductor products. The IRF7410TRPBF undergoes rigorous testing and quality control measures to ensure consistent performance and long-term reliability. The transistor's wide operating temperature range, from -55°C to +150°C, makes it suitable for use in various environmental conditions, from industrial to automotive applications.

The IRF7410TRPBF's power dissipation rating of 2.5W ensures efficient heat management and helps maintain the transistor's performance and reliability over its lifetime. The enhancement channel mode simplifies gate control and enables efficient switching, contributing to overall system performance and power efficiency.

TYPEDESCRIPTION
MfrInfineon Technologies
SeriesHEXFET®
PackagingTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs91 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds8676 pF @ 10 V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
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Warranty, Returns, and Additional Information

QA & Return Policy

Parts Quality Guarantee: 365 days

Returns for refund: within 90 days

Returns for Exchange: within 90 days

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Parts Packaging Guarantee:100% ESD anti-static protection, combined with high toughness and superior impact absorption.

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