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Infineon Technologies IRLR024NTRLPBF

   
Manufacturer Part Number : IRLR024NTRLPBF
Manufacturer : Infineon Technologies
Description : Trans MOSFET N-CH Si 55V 17A 3-Pin(2+Tab) DPAK T/R
Datasheet : IRLR024NTRLPBF.PDF IRLR024NTRLPBF PDF
EDA / CAD Models : IRLR024NTRLPBF by SnapEDA
Base Product Number : IRLR024
Stock Condition :In Stock 3000, New Original
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Infineon Technologies IRLR024NTRLPBF

In Stock: 3000   Qty:

Overview of IRLR024NTRLPBF

The IRLR024NTRLPBF is an N-Channel HEXFET Power MOSFET, a product of Infineon Technologies. This component is known for its exceptional performance in power management tasks within electronic circuits. It offers fast switching capabilities and low on-resistance (RDS(on)), making it a suitable choice for applications that demand efficient energy use and precise control.

IRLR024NTRLPBF Product Outer Packaging and Label Information

IRLR024NTRLPBF Product Outer Packaging and Label Information

Technical Features

The IRLR024NTRLPBF showcases several technical features that distinguish it from other components. Its primary characteristic is the ability to handle high currents up to 17A continuously, which makes it ideal for heavy-duty applications. The device also exhibits low threshold voltage; this allows the transistor to operate effectively even under lower voltages - a feature particularly beneficial in battery-operated devices.

In addition, the IRLR024NTRLPBF provides quick switching speeds crucial for high-frequency circuit operations and comes with built-in thermal protection enhancing reliability across various conditions. Furthermore, its compact size due to DPAK packaging allows easy incorporation into space-constrained designs without compromising performance.

Application Scenarios

The versatility of the IRLR024NTRLPBF enables usage across multiple application scenarios:

  • Power Supply Units: With its ability to handle high currents efficiently and quickly respond during load changes, this MOSFET serves as an excellent choice for managing power supplies in diverse electronics such as computer servers or industrial machinery.

  • Battery-Powered Devices: Due to its low threshold voltage property, this transistor finds extensive use in portable devices like electric vehicles or drones where effective energy usage optimization is crucial.

IRLR024NTRLPBF Replacement Model

  1. IRFZ44N: This N-Channel MOSFET from International Rectifier can handle up to 49A of continuous drain current with an RDS(on) value as low as 0.0175 ohms at VGS=10V, making it more efficient than the IRLR024NTRLPBF under certain conditions.

  2. STP55NF06L: Manufactured by STMicroelectronics, this device is also an N-Channel Power MOSFET that offers similar features and performance to the IRLR024NTRLPBF but has superior thermal performance due to its TO-220 package design.

  3. FDMS86181: Produced by ON Semiconductor, this transistor provides comparable functionality with ultra-low leakage and very fast switching speeds (<25ns). Its small form factor makes it perfect for space-constrained designs like portable devices.

  4. CSD18502Q5B: This model from Texas Instruments is another suitable alternative due to its high efficiency and energy-saving capabilities along with robust ESD protection which adds reliability in various application scenarios.

IRLR024NTRLPBF Same Series Model

The IRLR024NTRLPBF belongs to the HEXFET Power MOSFET series from Infineon Technologies. Other models in the same series that share similar characteristics include:

  1. IRLR3110ZPBF: This is an N-channel power MOSFET with a continuous drain current of 42A and low on-resistance (RDS(on)) for efficient operation.

  2. IRLR2905ZPBF: Another N-channel device, this model has a slightly lower continuous drain current rating at 36A but still offers excellent efficiency due to its low RDS(on).

  3. IRLR3410ZPBF: This model boasts one of the highest continuous drain currents in the series at 48A, making it suitable for heavy-duty applications.

  4. IRLR2705PBF: With a lower threshold voltage than some other models in the series, this device can operate effectively even under lower voltages which makes it ideal for battery-operated devices.

Series:HEXFET?
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25~C:17A (Tc)
Rds On (Max) @ Id, Vgs:65 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 250米A
Gate Charge (Qg) @ Vgs:15nC @ 5V
Input Capacitance (Ciss) @ Vds:480pF @ 25V
Power - Max:45W
Operating Temperature:-55~C ~ 175~C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-Pak
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Parts Packaging Guarantee:100% ESD anti-static protection, combined with high toughness and superior impact absorption.

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