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Vishay Siliconix SI2315BDS-T1-E3

Manufacturer Part Number :	SI2315BDS-T1-E3
Manufacturer :	Vishay Siliconix
Description :	MOSFET P-CH 12V 3A SOT23-3
Datasheet :	SI2315BDS-T1-E3.PDF
EDA / CAD Models :	SI2315BDS-T1-E3 by SnapEDA
Base Product Number :	SI2315
Stock Condition :	In Stock 43599, New Original

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Vishay Siliconix SI2315BDS-T1-E3

In Stock: 43599 Qty:

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The SI2315BDS-T1-E3 is a power MOSFET from Vishay Siliconix, a well-regarded manufacturer of semiconductor components. This device utilizes trench technology, a sophisticated fabrication process that results in a low on-resistance, making it highly efficient for power applications. The component is also available in a halogen-free option, contributing to environmentally responsible design choices.

Vishay Siliconix SI2315BDS-T1-E3 electronic chip

This particular MOSFET is designed for applications requiring a 1.8-volt rating. Its performance characteristics, including low on-resistance, are well-suited for various power management tasks. As a stocked item at Nantian Electronics, this component offers convenient access for those looking for a reliable and efficient power MOSFET solution.

Vishay Siliconix SI2315BDS-T1-E3 original reel label

Type	Description
Category	Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.85A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	715 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2315

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