Vishay Siliconix IRFP460PBF

1. What type of device is the IRFP460PBF?

The IRFP460PBF is a single N-channel power MOSFET from Vishay Siliconix in a TO-247 package. It is rated for 500 V drain-source voltage and is positioned for higher-power commercial and industrial applications.

2. What are the key electrical ratings of the IRFP460PBF?

Its main headline ratings include 500 V VDS, 20 A continuous drain current at TC = 25 °C, 13 A at TC = 100 °C, 80 A pulsed drain current, and 0.27 Ω maximum RDS(on) at VGS = 10 V. These are the core specs most buyers and design engineers check first when comparing high-voltage MOSFET options.

3. Is the IRFP460PBF suitable for high-voltage switching applications?

Yes. Based on its 500 V rating, fast-switching characteristics, and TO-247 package, the IRFP460PBF is well suited to high-voltage switching designs such as power conversion and industrial switching stages. Vishay also describes the TO-247 package as preferred for commercial-industrial applications where power levels are too high for TO-220 devices.

4. Does the IRFP460PBF offer avalanche capability?

Yes. The datasheet states that the device is repetitive avalanche rated and lists single pulse avalanche energy of 960 mJ, repetitive avalanche current of 20 A, and repetitive avalanche energy of 28 mJ. Those ratings are useful when evaluating device ruggedness in circuits that may experience inductive switching stress.

5. What gate charge and switching data are available for design evaluation?

The datasheet provides detailed dynamic data, including 210 nC maximum total gate charge, 29 nC Qgs, 110 nC Qgd, 18 ns typical turn-on delay, 59 ns typical rise time, 110 ns typical turn-off delay, and 58 ns typical fall time. This helps engineers evaluate driver requirements and switching-loss behavior during component selection.