The Nexperia BUK768R1-40E,118 is a robust N-channel MOSFET designed for high-performance switching and power management in automotive and industrial environments. Operating with a maximum drain-source voltage of 40 V and a continuous current capability of up to 75 A (Tc), it provides a strong balance of efficiency and power handling. Packaged in a surface-mount D2PAK format, it supports efficient heat dissipation and high-power operation, delivering up to 96 W of thermal power (Tc). This device features a true standard-level gate drive with a threshold voltage greater than 1 V even at elevated temperatures, ensuring stable control in real-world conditions. Additionally, the MOSFET is AEC-Q101 qualified, making it suitable for demanding automotive safety and reliability requirements.
Engineered to withstand thermally intensive environments with a maximum junction temperature of 175 °C, the BUK768R1-40E,118 is ideal for use in motor control, DC-DC converters, battery management systems, and power distribution modules. It is also repetitive avalanche rated, enhancing durability during voltage transients common in power electronics. With optimized switching characteristics and low conduction losses, this MOSFET helps improve overall system efficiency while maintaining reliable performance under continuous load stress.
Nantian Electronics stocks a wide quantity of BUK768R1-40E,118 components and offers comprehensive technical documentation such as datasheets and pin configuration materials to support design and procurement needs. Welcome to contact us for inquiries, pricing, and ordering.
