2SK2225-E-6529429.jpg0.0000000000 2SK2225-E-6529429.jpg 40360
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Renesas Electronics Corporation 2SK2225-E

   
Manufacturer Part Number : 2SK2225-E
Manufacturer : Renesas Electronics Corporation
Description : MOSFET N-CH 1500V 2A
Package : TO-3P
Datasheet : 2SK2225-E.PDF 2SK2225-E PDF
EDA / CAD Models : 2SK2225-E by SnapEDA
Stock Condition :In Stock 40360, New Original
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1780 1798 6529429 http://documentation.renesas.com/doc/products/transistor/rej03g1005_2sk2225ds.pdf Renesas-Electronics-America/2SK2225-E

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Renesas Electronics Corporation 2SK2225-E

In Stock: 40360   Qty:

The Renesas Electronics Corporation 2SK2225-E is a silicon N-channel MOSFET designed for high-voltage and high-speed switching applications. It features a high drain-source breakdown voltage of 1500 V, allowing it to handle demanding voltage conditions while maintaining reliable switching performance. Its high-speed switching capability and low drive current help improve power conversion efficiency and simplify control requirements. The device also has no secondary breakdown, making it suitable for applications where stable and dependable switching operation is important.

Renesas Electronics Corporation 2SK2225-E part

The 2SK2225-E is well suited for switching regulators, DC-DC converters, and other high-voltage power switching circuits that require efficient and reliable MOSFET operation. 

Renesas Electronics Corporation 2SK2225-E package label

As a professional Renesas Electronics Corporation supplier and distributor, Nantian Electronics has a large number of 2SK2225-E components in stock. We provide 2SK2225-E parameters, datasheet PDF, and pin diagram instructions for download, and can offer quotation and technical support for customers who need to purchase this part.

Series:-
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Standard
Drain to Source Voltage (Vdss):1500V (1.5kV)
Current - Continuous Drain (Id) @ 25~C:2A (Ta)
Rds On (Max) @ Id, Vgs:12 Ohm @ 1A, 15V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) @ Vgs:-
Input Capacitance (Ciss) @ Vds:984.7pF @ 30V
Power - Max:50W
Operating Temperature:150~C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3PFM, SC-93-3
Supplier Device Package:TO-3PFM

Q1: What are the main features of the 2SK2225-E?

A1: The 2SK2225-E is a silicon N-channel power MOSFET featuring a high drain-source breakdown voltage of 1500 V, high-speed switching, low drive current, and no secondary breakdown. These characteristics make it suitable for reliable high-voltage switching applications.

 

Q2: What is the 2SK2225-E used for?

A2: The 2SK2225-E is mainly designed for high-speed power switching applications. It can be used in switching regulators, DC-DC converters, and other high-voltage power conversion circuits that require fast and reliable switching performance.

Q3: Does the 2SK2225-E have any alternative manufacturer and part number?

A3: Direct drop-in replacements should be selected carefully because package type, pin configuration, voltage rating, current rating, switching characteristics, gate requirements, and thermal performance all need to be compatible. Possible alternatives may include high-voltage N-channel MOSFETs from other manufacturers, but the specific application requirements should be checked before selecting a replacement.

Q4: Is technical support available for the 2SK2225-E?

A4: Yes. Nantian Electronics can provide product information and purchasing support for the 2SK2225-E, including parameters, datasheet, pin diagram information, availability, and quotation. Customers can also provide their application requirements when requesting assistance with replacement selection or compatibility evaluation.

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