IPA80R650CE-5577259.jpg0.0000000000 IPA80R650CE-5577259.jpg 10472
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Infineon Technologies IPA80R650CE

   
Manufacturer Part Number : IPA80R650CE
Manufacturer : Infineon Technologies
Description : MOSFET, N-CH, 800V, 8A, TO-220FP
Datasheet : IPA80R650CE.PDF IPA80R650CE PDF
EDA / CAD Models : IPA80R650CE by SnapEDA
Base Product Number : IPA80
Stock Condition :In Stock 10472, New Original
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1780 1798 5577259 /datasheets/Discrete Semiconductor Products/IPA80R650CE-5577259.pdf International-Rectifier-Infineon-Technologies/IPA80R650CE

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Infineon Technologies IPA80R650CE

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The Infineon Technologies IPA80R650CE is a high-performance power MOSFET designed to meet the demands of high-voltage applications. Leveraging advanced high-voltage technology, this component is capable of handling extreme voltage transients with robust dv/dt capability. It features a high peak current capability, allowing it to operate reliably under demanding load conditions. The MOSFET is engineered with a low gate charge and low effective capacitance, ensuring efficient switching characteristics, reduced power loss, and smoother overall performance, making it ideal for use in energy-efficient power conversion systems.

Infineon Technologies IPA80R650CE component chip

Offering optimized design for high-efficiency and reliability, the IPA80R650CE is suitable for applications such as power supplies, inverters, and motor control systems. Its ability to handle high peak currents and its efficient switching properties make it particularly well-suited for use in switching power electronics. 

Infineon Technologies IPA80R650CE package label

Nantian Electronics, as an authorized distributor of Infineon Technologies, provides comprehensive support for the IPA80R650CE, including datasheets, detailed specifications, and pin diagrams. With a large inventory and competitive pricing, Nantian Electronics ensures that customers receive high-quality solutions tailored to their needs.

TypeDescription
CategoryDiscrete Semiconductor Products TransistorsFETs, MOSFETs Single 
MfrInfineon Technologies
SeriesCoolMOS™ CE
PackagingTube
Part StatusDiscontinued at Nantian
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 100 V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack
Base Product NumberIPA80R


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