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Infineon Technologies IRLS3034-7PPBF

Manufacturer Part Number :	IRLS3034-7PPBF
Manufacturer :	Infineon Technologies
Description :	MOSFET N-CH 40V 240A D2PAK
Package :	TO-263-7
Datasheet :	IRLS3034-7PPBF.PDF
EDA / CAD Models :	IRLS3034-7PPBF by SnapEDA
Base Product Number :	IRLS3034-7
Stock Condition :	In Stock 77790, New Original

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Infineon Technologies IRLS3034-7PPBF

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The IRLS3034-7PPBF from Infineon Technologies is a high-performance N-channel power MOSFET designed for efficient switching and power management applications. It features a low on-resistance at a gate drive of 4.5V, making it ideal for logic-level control while minimizing conduction losses. With a 40V drain-source voltage rating and high current handling capability, this device delivers strong performance in demanding environments. Its enhanced ruggedness, including improved avalanche capability and dynamic dV/dt performance, ensures reliable operation under stress conditions.

Infineon Technologies IRLS3034-7PPBF diode part

Packaged in a D2PAK (7-lead) surface-mount format, this MOSFET supports high power dissipation and efficient thermal management. It is widely used in DC-DC converters, motor drives, battery management systems, and power distribution applications. The device’s optimized characteristics, including low gate charge and robust body diode performance, make it suitable for high-efficiency designs. Nantian Electronics, as a professional Infineon Technologies distributor, keeps IRLS3034-7PPBF in stock and provides datasheets and technical support, welcoming inquiries for competitive pricing and orders.

Type	Description
Category	Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	HEXFET®
Packaging	Tape & Reel (TR)
Part Status	Discontinued at DigiKey
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 200A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10990 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	380W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (7-Lead)
Package / Case	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

What are its key features?

N-channel MOSFET, 40V rating, high current capability, very low RDS(ON) at 4.5V gate drive, fast switching, strong avalanche ruggedness, and D2PAK (7-lead) package.

What is it used for?

Used in DC-DC converters, motor control, battery management systems, and power switching applications requiring high efficiency and low losses.

Are there alternative parts?

Yes, alternatives include similar logic-level MOSFETs from Infineon, ON Semiconductor, Vishay, and STMicroelectronics with comparable voltage rating, current capability, and low RDS(ON).

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