Infineon Technologies IPB65R660CFDAATMA1

Manufacturer Part Number :	IPB65R660CFDAATMA1
Manufacturer :	Infineon Technologies
Description :	MOSFET N-CH TO263-3
Datasheet :	IPB65R660CFDAATMA1.PDF
EDA / CAD Models :	IPB65R660CFDAATMA1 by SnapEDA
Base Product Number :	IPB65
Stock Condition :	In Stock 1000, New Original

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Infineon Technologies IPB65R660CFDAATMA1

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We can supply Infineon Technologies part# IPB65R660CFDAATMA1, use the request quote form to request IPB65R660CFDAATMA1 pirce and lead time. Nantian Electronics - ntchip.com is an independent stocking distributor of electronic components. With 3+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPB65R660CFDAATMA1. The price and lead time for IPB65R660CFDAATMA1 depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# IPB65R660CFDAATMA1. We look forward to doing business with you.

Series:	Automotive, AEC-Q101, CoolMOS?
FET Type:	MOSFET N-Channel, Metal Oxide
FET Feature:	Standard
Drain to Source Voltage (Vdss):	650V
Current - Continuous Drain (Id) @ 25～C:	6A (Tc)
Rds On (Max) @ Id, Vgs:	660 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 200米A
Gate Charge (Qg) @ Vgs:	20nC @ 10V
Input Capacitance (Ciss) @ Vds:	543pF @ 100V
Power - Max:	62.5W
Operating Temperature:	-40～C ~ 150～C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263

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At NTCHIP.com, we are committed to delivering the highest standards in electronic components. For critical Discrete Semiconductor-FETs - Single like the Infineon Technologies IPB65R660CFDAATMA1, we operate a professional Quality Control (QC) center to ensure every unit you receive is factory-grade in quality and reliability.