NXP Semiconductors AFT23H160-25SR3

This 32 W AFT23H160-25SR3 asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.

AFT23H160-25SR3

The AFT23H160-25SR3 is a high-performance RF Power MOSFET transistor developed by NXP Semiconductors. This device is designed to amplify radio frequency (RF) signals, making it a critical component in applications such as broadcast transmitters, RF energy, and cellular base stations. Its construction using Silicon LDMOS technology allows for high efficiency and reliability in RF power applications.

As a professional NXP Semiconductors distributor, Nantian Electronic has a large number of AFT23H160-25SR3 in stock. We also provide AFT23H160-25SR3 parameters, AFT23H160-25SR3 Datasheet PDF and pin diagram instructions for download.

AFT23H160-25SR3 Dimensions

The size information of AFT23H160-25SR3 is as follows:

AFT23H160-25SR3 package dimensions

Features

• Advanced High Performance In--Package Doherty

• Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• Designed for Digital Predistortion Error Correction Systems

Key Specifications

• Transistor Type: The AFT23H160-25SR3 utilizes LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which is renowned for its high efficiency and high gain capabilities.

• RF Power Capability: As an RF Power MOSFET, this transistor is specifically designed to handle and amplify high-frequency signals efficiently.

• Moisture Sensitivity: Yes, indicating that the device must be handled with care during installation and operation to prevent moisture-related damage.