WNSCM80120WQ--1.jpg0.0000000000 WNSCM80120WQ--1.jpg 13200
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WeEn Semiconductors WNSCM80120WQ

   
Manufacturer Part Number : WNSCM80120WQ
Manufacturer : WeEn Semiconductors
Description : N-Channel 1200 V 42A (Ta) 230W (Ta) Through Hole TO-247-3
Package : TO-247-3
Datasheet : WNSCM80120WQ.PDF WNSCM80120WQ PDF
EDA / CAD Models : WNSCM80120WQ by SnapEDA
Base Product Number : WNSCM80120
Stock Condition :In Stock 13200, New Original
Quantity:
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1780 1798 7626800 /datasheets/Discrete Semiconductor Products/WNSCM80120WQ--1.pdf ween-semiconductors/wnscm80120wq

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WeEn Semiconductors WNSCM80120WQ

In Stock: 13200   Qty:

The WeEn Semiconductors WNSCM80120WQ is a highly efficient and reliable power transistor designed for modern energy conversion and management systems. With features like low on-resistance, fast switching speeds, and a 0V turn-off gate voltage for simplified gate drive, this model ensures optimal performance in demanding applications. Its controllable dV/dt helps to minimize electromagnetic interference (EMI), and its design supports easy parallel connection for enhanced flexibility. Additionally, the reduced cooling requirements make it an energy-efficient choice for a wide range of power electronics.

WeEn Semiconductors WNSCM80120WQ part picture

Ideal for switch-mode power supplies, uninterruptible power supplies (UPS), solar string inverters and optimizers, EV chargers, and motor drives, the WNSCM80120WQ stands out as a versatile and robust solution. 

WeEn Semiconductors WNSCM80120WQ Package Original Label

WeEn Semiconductors WNSCM80120WQ Package Original Label

As a trusted WeEn Semiconductors distributor, Nantian Electronics offers extensive stock of the WNSCM80120WQ, along with detailed parameters, datasheets, and pin diagram instructions for download. We welcome inquiries and are committed to providing the best prices and service!

TypeDescription
CategoryDiscrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
MfrWeEn Semiconductors
Series-
PackagingBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C42A (Ta)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id4.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs59 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 1000 V
FET Feature-
Power Dissipation (Max)230W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Base Product NumberWNSCM80120


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