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Vishay/Siliconix SI4410BDY-T1-E3

Manufacturer Part Number :	SI4410BDY-T1-E3
Manufacturer :	Vishay/Siliconix
Description :	MOSFET N-CH 30V 7.5A 8SO
Datasheet :	SI4410BDY-T1-E3.PDF
EDA / CAD Models :	SI4410BDY-T1-E3 by SnapEDA
Base Product Number :	SI4410
Stock Condition :	In Stock 55000, New Original

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Vishay/Siliconix SI4410BDY-T1-E3

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The SI4410BDY-T1-E3 from Vishay/Siliconix is an N-channel MOSFET designed to deliver efficient switching performance in compact electronic systems. With a 30 V rating and the ability to handle up to 7.5 A, it provides a strong balance of power capability and thermal performance, making it suitable for a wide range of low- to medium-voltage applications. Its low on-resistance helps reduce power loss, while the 8-SOIC surface-mount package supports easy integration into modern PCB designs.

Vishay/Siliconix SI4410BDY-T1-E3 mosfet chip

This MOSFET is commonly used in DC-DC converters, load switches, motor control circuits, and power management modules where reliability and efficient switching are essential. Its compact package and solid electrical characteristics make it well-suited for consumer electronics, industrial equipment, and communication devices.

Vishay/Siliconix SI4410BDY-T1-E3 original reel label

As a professional Vishay/Siliconix distributor, Nantian Electronics has a large inventory of the SI4410BDY-T1-E3 available. We also provide detailed parameters, datasheets (PDF), and pin-diagram instructions for download. If you are interested in purchasing this part, feel free to contact us — we will offer our best pricing. Welcome to inquire and place your order!

Type	Description
Category	Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 5 V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.4W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)
Base Product Number	SI4410

What are the main features of the SI4410BDY-T1-E3?

The SI4410BDY-T1-E3 is an N-channel MOSFET designed for low-voltage, high-efficiency switching applications. It supports up to 30 V and 7.5 A, offers low on-resistance for reduced power loss, and comes in an 8-SOIC surface-mount package for easy integration into compact designs.

What is this MOSFET used for?

It is commonly used in DC-DC converters, battery-powered equipment, load switches, motor drives, and power-management circuits where efficient switching and low conduction loss are important.

Does it have alternative or substitute parts?

Yes, several MOSFETs offer similar voltage and current ratings. Common alternatives include:

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