The LMG5200MOFR, a testament to Texas Instruments' innovative prowess in the semiconductor field, is a power stage device integrating highly efficient 15-mΩ GaN FETs and a dedicated driver. With an enduring voltage capacity of 80 V and an impressive pulsed voltage rating of 100 V, this device stands out for its potential to withstand high-power applications. Its package is optimized to eliminate the need for underfill while simplifying PCB layout by addressing creepage and clearance requirements, making it an easy-to-implement option for electronic designers.
This power stage device truly shines in its performance, characterized by incredibly low common source inductance ensuring high slew rate switching without causing excessive ringing in hard-switched topologies. Hence, it is ideally suited for both isolated and non-isolated applications empowering designers with versatility in use. The gate driver, capable of up to a high frequency of 10 MHz switching, enhances the speed and efficiency of the operations. Notably, it includes internal bootstrap supply voltage clamping to prevent GaN FET overdrive, protecting the device from potential failures due to overvoltage. Addition of a safety feature like Supply Rail Undervoltage Lockout Protection further augments its reliability. With exceptional propagation delay (29.5ns typical) and matching (2ns typical), it assures synchronization and rapid signal processing. Add to this the advantage of low power consumption, and you have a power stage optimized for performance, safety, and energy efficiency.
LMG5200MOFR Original Label
Nantian Electronics, proudly serving as a professional distributor for Texas Instruments, holds abundant stock of the LMG5200MOFR. It also provides exhaustive data such as parameters, datasheet in PDF format, and pin diagram instructions for download, to steadfastly assist customers in their designing efforts.
