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STMicroelectronics STH13N120K5-2AG

Manufacturer Part Number :	STH13N120K5-2AG
Manufacturer :	STMicroelectronics
Description :	MOSFET N-CH 1200V 12A H2PAK-2
Datasheet :	STH13N120K5-2AG.PDF
EDA / CAD Models :	STH13N120K5-2AG by SnapEDA
Base Product Number :	STH13
Stock Condition :	In Stock 10000, New Original

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STMicroelectronics STH13N120K5-2AG

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The STH13N120K5-2AG is a highly advanced N-channel Power MOSFET from STMicroelectronics, crafted using their cutting-edge MDmesh K5 technology. This technology incorporates a unique vertical structure that significantly enhances the device's performance by drastically reducing its on-resistance, while also minimizing the gate charge. These improvements make the STH13N120K5-2AG an ideal choice for applications that demand high power density and efficiency, fitting perfectly into various high voltage switching contexts.

STMicroelectronics STH13N120K5-2AG original part picture

Available through Nantian Electronics, a professional distributor of STMicroelectronics products, the STH13N120K5-2AG is readily available for businesses and electronics developers. Nantian Electronics not only stocks a large quantity of these components but also provides comprehensive support including access to detailed datasheets, parameter information, and pin diagram instructions. This ensures that users can understand and utilize this component effectively in their projects, benefiting from its superior performance characteristics.

STMicroelectronics STH13N120K5-2AG Original Reel Label

STMicroelectronics STH13N120K5-2AG Original Reel Label

Type	Description
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	690mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	44.2 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	H2PAK-2
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number	STH13

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