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Samsung Semiconductor K4EBE304ED-EGCG

Manufacturer Part Number :	K4EBE304ED-EGCG
Manufacturer :	Samsung Semiconductor
Description :
Datasheet :	K4EBE304ED-EGCG.PDF
EDA / CAD Models :	K4EBE304ED-EGCG by SnapEDA
Stock Condition :	In Stock 4000, New Original

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Samsung Semiconductor K4EBE304ED-EGCG

In Stock: 4000 Qty:

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The K4EBE304ED-EGCG is part of Samsung's Low Power Double Data Rate 3 (LPDDR3) mobile DRAM series. Recognized for its high performance, speed, and power efficiency, it supports a wide range of mobile solutions including smartphones, IoT devices and wearables.

K4EBE304ED-EGCG Spot stock picture

Key Features:

High Performance and Speed: With speeds up to 2133 Mbps, this memory chip can handle demanding applications with ease.
Power Efficiency: Operating voltages at 1.8V / 1.2V / 1.2V contribute to significant energy savings.
Broad Compatibility: Its versatility makes it suitable for diverse mobile solutions from smartphones to IoT devices and wearables.

Technical Specifications:

Density : 32Gb (Gigabit)
Organization : x32
Speed : Up to 2133Mbps
Voltage : Operates at multiple voltage levels - Primary: 1.8 V; Secondary/IO: both at 1.2 V
Temperature Range : -25 ~ +85 °C
Package Type: FBGA package with total pin count as per specification

TYPE	DESCRIPTION
Density	32 Gb
Org.	x32
Speed	2133 Mbps
Voltage	1.8 / 1.2 / 1.2 V
Temp.	-25 ~ 85 °C
Package	178FBGA

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At NTCHIP.com, we are committed to delivering the highest standards in electronic components. For critical Integrated Circuits (ICs)-Specialized ICs like the Samsung Semiconductor K4EBE304ED-EGCG, we operate a professional Quality Control (QC) center to ensure every unit you receive is factory-grade in quality and reliability.