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ROHM Semiconductor RGS80TSX2DHRC11

Manufacturer Part Number :	RGS80TSX2DHRC11
Manufacturer :	ROHM Semiconductor
Description :	IGBT TRENCH FS 1200V 80A
Package :	TO-247N
Datasheet :	RGS80TSX2DHRC11.PDF
EDA / CAD Models :	RGS80TSX2DHRC11 by SnapEDA
Base Product Number :	RGS80
Stock Condition :	In Stock 15500, New Original

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ROHM Semiconductor RGS80TSX2DHRC11

In Stock: 15500 Qty:

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The RGS80TSX2DHRC11 from ROHM Semiconductor is a high-performance 1200 V, 80 A trench field-stop IGBT designed for applications that demand efficient switching and strong reliability. Its low collector-emitter saturation voltage helps reduce conduction losses, while built-in fast and soft-recovery diode technology ensures smooth, efficient switching even under high-power conditions. With a robust 555 W power rating and a TO-247N through-hole package, it is well suited for designs that require excellent thermal handling and long-term durability.

ROHM Semiconductor RGS80TSX2DHRC11 IGBT part

This device also features a 10 μs short-circuit withstand capability and meets the AEC-Q101 automotive qualification standard, making it a strong choice for demanding environments such as motor drives, industrial inverters, power conditioning systems, and automotive power modules. Its combination of efficiency, ruggedness, and safety margin makes it a dependable solution for high-voltage, high-current power control designs.

ROHM Semiconductor RGS80TSX2DHRC11 original package label

As a professional ROHM Semiconductor distributor, Nantian Electronics has a large inventory of the RGS80TSX2DHRC11 available. We also provide detailed parameters, the RGS80TSX2DHRC11 datasheet (PDF), and pin-diagram instructions for download. If you would like to purchase this part, simply contact us — we will offer you our best price. Welcome to inquire and place your order!

Type	Description
Category	Discrete Semiconductor ProductsTransistors - IGBTs - Single
Manufacturer	ROHM Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 40A
Power - Max	555 W
Switching Energy	3mJ (on), 3.1mJ (off)
Input Type	Standard
Gate Charge	104 nC
Td (on/off) @ 25°C	49ns/199ns
Test Condition	600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)	198 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247N
Base Product Number	RGS80

What are the key features of the RGS80TSX2DHRC11?

It is a 1200 V, 80 A trench field-stop IGBT designed for high-efficiency switching. It offers low V_CE(sat), a 10 µs short-circuit withstand time, and includes a very fast, soft-recovery diode. It is also AEC-Q101 qualified for automotive use.

What is this IGBT used for?

It is commonly used in inverters, motor drives, power supplies, EV/HEV systems, and other high-voltage switching applications where efficiency and ruggedness are important.

Does it have alternative or similar parts?

Possible alternatives include ROHM’s RGS series IGBTs with similar voltage and current ratings, as well as comparable 1200 V field-stop IGBTs from ON Semiconductor, Infineon, or Fuji Electric. Selection depends on switching speed, thermal design, and package requirements.

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