The NE5520379A-T1A, a product of NEC Corporation, is a specialized N-channel silicon power MOS FET designed specifically as the transmission power amplifier for 3.2 V GSM 900 handsets. This device is a testament to NEC's commitment to advancing mobile communication technology, offering high performance and efficiency in a compact form.
NEC NE5520379A-T1A Package Diagrams:
Manufactured using NEC's proprietary NEWMOS technology, the NE5520379A-T1A is housed in a surface-mount package, making it suitable for integration in modern electronic devices. The device is capable of delivering an impressive 34.6 dBm output power with a power efficiency of 68% at 915 MHz under a 2.8 V supply voltage. This combination of power and efficiency makes it a reliable choice for enhancing the performance of GSM 900 handsets.
NEC NE5520379A-T1A Original Reel Label
As a professional distributor of NEC products, Nantian Electronics maintains a large stock of NE5520379A-T1A devices and provides a range of resources, including detailed parameters, datasheets in PDF format, and pin diagram instructions for download.
