Micron Technology MTA4ATF51264HZ-3G2J1

The MTA4ATF51264HZ-3G2J1 from Micron Technology is a high-performance DDR4 memory module designed to provide reliable and efficient data storage for modern computing systems. This 4GB small-outline dual in-line memory module (SODIMM) features a 260-pin design and supports fast data transfer rates including PC4-3200, PC4-2666, and PC4-2400, allowing it to deliver responsive performance for a variety of computing tasks. Operating at a nominal voltage of 1.20V, the module is designed for improved power efficiency while maintaining stable and consistent memory operation. The single-rank configuration and fly-by topology help enhance signal integrity and system stability, making the module suitable for compact and high-performance platforms.

The MTA4ATF51264HZ-3G2J1 incorporates advanced DDR4 features such as on-die termination (ODT) for data, strobe, and mask signals, as well as data bus inversion (DBI) to improve signal reliability and reduce power consumption. It also includes low-power auto self-refresh (LPASR) for energy-efficient operation and an integrated I²C serial presence-detect (SPD) EEPROM that allows systems to automatically detect memory parameters. With eight internal memory banks organized into two groups, the module supports burst length operations and flexible memory access modes for optimized performance. The gold edge contacts improve durability and electrical conductivity, while the halogen-free construction meets modern environmental standards. 

As a professional Micron Technology supplier and distributor, Nantian Electronics maintains a large inventory of MTA4ATF51264HZ-3G2J1 modules and provides product parameters, datasheets (PDF), and pin diagram documentation for customer reference. Customers interested in purchasing this component are welcome to contact Nantian Electronics for inquiries and competitive quotations.