The Micron Technology MT28EW01GABA1LJS-0SIT TR is a high-performance 1Gb single-level cell (SLC) flash memory solution designed for applications requiring fast, reliable, and secure storage. With a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, and an I/O buffer voltage (VCCQ) of 1.65V to VCC, this memory device is highly versatile. It supports asynchronous random and page read operations with a page size of 32 bytes or 16 words, delivering a page access speed of 20ns and random access times as fast as 95ns under optimal conditions. Furthermore, its 512-word program buffer enables accelerated write speeds, achieving up to 2.5MB/s with the accelerated buffer program mode.
The MT28EW01GABA1LJS-0SIT TR is optimized for durability and security, with a minimum erase cycle endurance of 100,000 cycles per block and a typical data retention time of 20 years. It provides advanced features like program and erase suspend/resume capabilities, block and chip erase functions, and robust software protection options password, volatile, and nonvolatile protection. The device also includes an extended memory block for secure identification and supports cyclic redundancy check (CRC) for program pattern verification. Packaged in RoHS-compliant, halogen-free TSOP or LBGA options, the memory is suitable for harsh environments with a broad operating temperature range of -40°C to +85°C. Nantian Electronics ensures reliable sourcing of the MT28EW01GABA1LJS-0SIT TR, with a large inventory, detailed product documentation, and competitive pricing available to meet your storage needs.
