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Infineon Technologies IPW65R065C7

   
Manufacturer Part Number : IPW65R065C7
Manufacturer : Infineon Technologies
Description : MOSFET N-Channel 650V 33A TO247-3
Datasheet : IPW65R065C7.PDF IPW65R065C7 PDF
EDA / CAD Models : IPW65R065C7 by SnapEDA
Base Product Number : IPW65
Stock Condition :In Stock 12812, New Original
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1 156 6306603 /datasheets/IntegratedCircuits/IPW65R065C7-6306603.pdf International-Rectifier-Infineon-Technologies/IPW65R065C7

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Infineon Technologies IPW65R065C7

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Introducing the IPW65R065C7 from Infineon Technologies, a product designed with professionals in mind. What sets this model apart is its increased MOSFET dv/dt ruggedness, able to withstand challenging working conditions, proving its robustness and reliability. It promises better efficiency, thanks to its best-in-class Figures of Merit for RDS(on)*Eoss and RDS(on)*Qg. The exceptional RDS(on) per package ratio further enhances its performance, making it a superior choice for those in pursuit of excellence.

IPW65R065C7  Infineon Technologies

IPW65R065C7 Dimension


IPW65R065C7 dimension Picture



The IPW65R065C7 is amazingly easy to use and drive, making it an approachable piece of technology, despite its advanced features. Environmentally responsible, it features lead-free plating and a halogen-free mold compound. It is qualified for industrial-grade applications according to JEDEC (J-STD20 and JESD22). As a leading distributor of Infineon Technologies, Nantian Electronics stocks a large number of IPW65R065C7 models always at the ready, allowing us to service and support customers efficiently. This model along with its datasheet PDF and pin diagram instructions are readily available for download to facilitate your understanding and usage.

TypeDescription
MfrInfineon Technologies
SeriesCoolMOS™ C7
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3020 pF @ 400 V
FET Feature-
Power Dissipation (Max)171W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3




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