TO-247AC.jpg0.0000000000 IRFP4468PBF-2198130.jpg 2630
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Infineon Technologies IRFP4468PBF

   
Manufacturer Part Number : IRFP4468PBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 195A TO-247AC
Datasheet : IRFP4468PBF.PDF IRFP4468PBF PDF
EDA / CAD Models : IRFP4468PBF by SnapEDA
Base Product Number : IRFP4468
Stock Condition :In Stock 2630, New Original
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287 309 6583768 /datasheets/Discrete Semiconductor Products/Infineon-Technologies-IRFP4468PBF-2198130.pdf infineon-technologies/irfp4468pbf

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Infineon Technologies IRFP4468PBF

In Stock: 2630   Qty:

Introduction to IRFP4468PBF

The IRFP4468PBF is a state-of-the-art power MOSFET transistor designed and manufactured by Infineon Technologies, a leader in semiconductor solutions. This component is specifically engineered to handle high-power applications and efficiency critical operations. Its construction and design cater to the needs of modern electronic circuits, offering robust performance in a variety of conditions.

Key Features

The IRFP4468PBF boasts several features that make it an optimal choice for power management and conversion applications. It operates with a maximum drain-source voltage of 100V, which allows it to handle substantial voltage levels efficiently. The device is capable of supporting a continuous drain current of up to 195A, making it highly suitable for high-current applications. Additionally, its low on-resistance, typically 0.0045 ohms, ensures minimal power loss and heat generation, enhancing overall system reliability.

Applications

This MOSFET finds its use in a wide range of applications due to its high efficiency and reliability. It is commonly used in:

  • Switch Mode Power Supplies (SMPS)

  • DC-DC converters

  • Motor drives

  • High-power lighting systems

  • Automotive applications, including electric vehicle (EV) drivetrains

Advantages

The IRFP4468PBF stands out for its exceptional performance in high-power and high-efficiency applications. Its robust design ensures long-term reliability under various operating conditions, including high temperature and high current. The low on-state resistance significantly reduces power losses, which is crucial for energy-sensitive applications. Furthermore, its ability to handle high pulse currents makes it an excellent choice for applications requiring high power density.

Technical Specifications

Understanding the technical specifications of the IRFP4468PBF is vital for integrating it into electronic systems. The key specifications include:

  • Drain-source voltage (VDS): 100V

  • Continuous drain current (ID): 195A

  • Pulse drain current (IDM): 780A

  • Power dissipation (PD): 520W

  • Operating temperature range: -55°C to +175°C

  • On-resistance (RDS(on)): 0.0045Ω

Conclusion

The IRFP4468PBF from Infineon Technologies exemplifies the cutting-edge in power MOSFET technology, offering high efficiency, reliability, and performance for demanding applications. Its extensive use across various industries underscores its adaptability and capability in enhancing power management solutions. Whether for industrial, automotive, or consumer electronics, the IRFP4468PBF provides a solid foundation for high-power, high-efficiency applications.

Infineon Technologies is the manufacturer of the IRFP4468PBF, which is available in stock at Nantian. The reference price for IRFP4468PBF can be found by referring to infineon tech or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the IRFP4468PBF datasheet PDF and pin diagram description that are available for download.

IRFP4468PBF Label

Original IRFP4468PBF in stock

The IRFP4468PBF has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.

All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to IRFP4468PBF could be downloaded from Nantian's platform.

Series:HEXFET?
Diode Configuration:MOSFET N-Channel, Metal Oxide
Diode Type:Standard
FET Type:100V
IGBT Type:195A (Tc)
Structure:2.6 mOhm @ 180A, 10V
Transistor Type:4V @ 250米A
Triac Type:540nC @ 10V
Type:19860pF @ 50V
Voltage:520W
Voltage - Breakover:-55~C ~ 175~C (TJ)
Voltage - Off State:Through Hole
Voltage - Zener (Nom) (Vz):TO-247-3
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