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Infineon Technologies IRF7342TRPBF

Manufacturer Part Number :	IRF7342TRPBF
Manufacturer :	Infineon Technologies
Description :	MOSFET 2P-CH 55V 3.4A 8-SOIC
Datasheet :	IRF7342TRPBF.PDF
EDA / CAD Models :	IRF7342TRPBF by SnapEDA
Base Product Number :	IRF7342
Stock Condition :	In Stock 57080, New Original

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Infineon Technologies IRF7342TRPBF

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The Infineon IRF7342TRPBF is a high-performance power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient switching applications. Its advanced construction, utilizing Infineon's Generation V technology, provides exceptionally low on-resistance, enabling high efficiency and minimizing power loss in circuits. Featuring a dual P-channel configuration and a surface-mount package, this component is conveniently integrated into modern electronic designs.

Infineon Technologies IRF7342TRPBF electronic part

Nantian Electronics, a reliable Infineon distributor, holds a significant inventory of IRF7342TRPBF devices. We offer this component in a readily available tape-and-reel format, ensuring consistent quality and ease of integration into your production process. For detailed information and to discuss your specific needs, please contact our team.

Infineon Technologies IRF7342TRPBF original package label

Type	Description
Category	Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tape & Reel (TR)
Part Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	3.4A
Rds On (Max) @ Id, Vgs	105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	690pF @ 25V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO
Base Product Number	IRF734

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