Overview of Infineon Technologies FF800R17KE3 IGBT Module
The Infineon Technologies FF800R17KE3 is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) module that epitomizes the latest advancements in silicon technology. This product is specifically engineered for high-power applications, offering a robust and high-performance solution for power conversion systems. The dual collector and dual emitter configuration enhance its versatility, making it an excellent choice for applications requiring high voltage and high current operations. The module is designed to maintain optimal performance within a wide temperature range, ensuring reliability and efficiency in various industrial settings.
Infineon FF800R17KE3
Infineon is the manufacturer of the FF800R17KE3, which is available in stock at Nantian. The reference price for FF800R17KE3 can be found by referring to Infineon or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the FF800R17KE3 datasheet PDF and pin diagram description that are available for download.
The FF800R17KE3 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.
All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to FF800R17KE3 could be downloaded from Nantian's platform.
Key Features
Dual Dual Collector Dual Emitter Configuration: Provides flexible and efficient power management solutions.
High Collector-Emitter Voltage: Capable of handling up to 1.7kV, suitable for high-voltage applications.
High Continuous Collector Current: Supports a continuous collector current of 1.15kA at 25°C, ideal for heavy-duty operations.
Robust Package: Housed in an IHM130 package, designed for optimal heat dissipation and reliability.
Wide Operating Temperature Range: Functions effectively between -40°C and +125°C, accommodating diverse environmental conditions.
Technical Specifications and Performance
Maximum Gate Emitter Voltage: Limited to 20V to protect the gate oxide layer from damage.
Dimensions: Measures 140mm in length, 130mm in width, and 38mm in height, facilitating integration into various systems.
Mounting Style: SMD/SMT for ease of installation and compatibility with modern PCB designs.
Applications and Advantages
The Infineon Technologies FF800R17KE3 module excels in applications such as power supplies, motor drives, and energy conversion systems, where high efficiency and reliability are paramount. Its high current and voltage handling capabilities make it an indispensable component in demanding industrial environments. The module's design ensures superior performance in terms of power density, thermal management, and electrical efficiency, leading to enhanced system reliability and extended lifespan.
