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Vishay Siliconix SI2302CDS-T1-GE3

Manufacturer Part Number :	SI2302CDS-T1-GE3
Manufacturer :	Vishay Siliconix
Description :	MOSFET N-CH 20V 2.6A
Package :	SOT23-3
Datasheet :	SI2302CDS-T1-GE3.PDF
EDA / CAD Models :	SI2302CDS-T1-GE3 by SnapEDA
Base Product Number :	SI2302
Stock Condition :	In Stock 1055200, New Original

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Vishay Siliconix SI2302CDS-T1-GE3

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The Vishay Siliconix SI2302CDS-T1-GE3 is a compact N-channel MOSFET designed for efficient switching and power management applications. With a 20V drain-source voltage rating and continuous current capability up to 2.6A, this device delivers reliable performance in low-voltage electronic circuits. Its surface-mount SOT-23-3 package helps save board space while supporting efficient thermal performance in compact designs.

Vishay Siliconix SI2302CDS-T1-GE3 transistor chip

The SI2302CDS-T1-GE3 is commonly used in load switching, DC-DC converters, battery-powered devices, power management circuits, and portable electronics. Its low power loss and fast switching characteristics make it suitable for applications requiring efficient energy control and stable operation.

Vishay Siliconix SI2302CDS-T1-GE3 original reel label

As a professional Vishay Siliconix supplier and distributor, Nantian Electronics maintains stock of SI2302CDS-T1-GE3 and provides datasheets, pin diagrams, and technical support for customer development and purchasing needs.

Category:Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single	Rds On (Max) @ Id, Vgs:57mOhm @ 3.6A, 4.5V
Mfr:Vishay Siliconix	Vgs(th) (Max) @ Id:850mV @ 250µA
Series:TrenchFET®	Gate Charge (Qg) (Max): @ Vgs5.5 nC @ 4.5 V
Packaging:Tape & Reel (TR)	Vgs (Max):±8V
Part Status:Active	Power Dissipation (Max):710mW (Ta)
FET Type:N-Channel	Operating Temperature:-55°C ~ 150°C (TJ)
Technology:MOSFET (Metal Oxide)	Mounting Type:Surface Mount
Drain to Source Voltage (Vdss):20 V	Supplier Device Package:SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)	Package / Case:TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V	Base Product Number:SI2302

What are the main features of the SI2302CDS-T1-GE3?

The SI2302CDS-T1-GE3 is an N-channel MOSFET with a 20V drain-source voltage rating and 2.6A current capability. It features compact SOT-23 packaging, low power loss, and efficient switching performance for low-voltage applications.

What is the SI2302CDS-T1-GE3 used for?

It is commonly used in power management circuits, DC-DC converters, load switching, battery-powered devices, portable electronics, and embedded systems requiring efficient switching control.

Does the SI2302CDS-T1-GE3 have alternative manufacturer and part numbers?

Yes. Similar MOSFET products are available from ON Semiconductor, Infineon, Nexperia, and Toshiba. Alternatives should be selected based on voltage rating, current capability, RDS(on), package type, and switching performance.

Is technical support available for this part?

Yes. Nantian Electronics provides technical support, including datasheets, pin diagrams, parameter information, replacement recommendations, and purchasing assistance for the SI2302CDS-T1-GE3.

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