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Fairchild Semiconductor FDT439N

Manufacturer Part Number :	FDT439N
Manufacturer :	Fairchild Semiconductor
Description :	MOSFET N-CH 30V 6.3A SOT-223
Package :	SOT-223
Datasheet :	FDT439N.PDF
EDA / CAD Models :	FDT439N by SnapEDA
Base Product Number :	FDT439
Stock Condition :	In Stock 13050, New Original

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Fairchild Semiconductor FDT439N

In Stock: 13050 Qty:

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The FDT439N, produced by ON Semiconductor, is an N-Channel enhancement mode power field effect transistor (MOSFET). It is built using ON Semiconductor's proprietary, high cell density, DMOS technology. This advanced technology allows the FDT439N to have a very high density process, which is tailored to minimize on-state resistance and provide superior switching performance. The device is capable of handling 6.3A at 30V and exhibits low on-state resistance (RDS(on)) of 0.045 at VGS = 4.5V and 0.058 at VGS = 2.5V, indicating efficient operation.

Fairchild FDT439N

As a professional Fairchild Semiconductor distributor, Nantian Electronics has a large number of FDT439N in stock. We also provide FDT439N parameters, FDT439N Datasheet PDF and pin diagram instructions for download.

FDT439N is packaged in taping

Applications

DC/DC Converter
Load Switch
Motor Driving

What is the drain to source voltage (Vdss) of the FDT439N?

The drain to source voltage (Vdss) of the FDT439N is 30V.

What is the continuous drain current (Id) of the FDT439N at 25°C?

The continuous drain current (Id) of the FDT439N at 25°C is 6.3A.

Series:	-
Diode Configuration:	MOSFET N-Channel, Metal Oxide
Diode Type:	Logic Level Gate, 2.5V Drive
FET Type:	30V
IGBT Type:	6.3A (Ta)
Structure:	45 mOhm @ 6.3A, 4.5V
Transistor Type:	1V @ 250米A
Triac Type:	15nC @ 4.5V
Type:	500pF @ 15V
Voltage:	1.1W
Voltage - Breakover:	-55～C ~ 150～C (TJ)
Voltage - Off State:	Surface Mount
Voltage - Zener (Nom) (Vz):	TO-261-4, TO-261AA
Applications:	SOT-223-4

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