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STMicroelectronics STB30N65M2AG

   
Manufacturer Part Number : STB30N65M2AG
Manufacturer : STMicroelectronics
Description : MOSFET N-CH 650V 20A D2PAK
Datasheet : STB30N65M2AG.PDF STB30N65M2AG PDF
EDA / CAD Models : STB30N65M2AG by SnapEDA
Base Product Number : STB30
Stock Condition :In Stock 1000, New Original
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1 156 6358765 STMicroelectronics/STB30N65M2AG

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STMicroelectronics STB30N65M2AG

In Stock: 1000   Qty:

Introduction to STB30N65M2AG by STMicroelectronics

The STB30N65M2AG is an innovative and high-performance product manufactured by the renowned company, STMicroelectronics. As a key player in semiconductor solutions, STMicroelectronics is dedicated to the design and production of electronic components that have vital roles in the functioning of our digital world. This specific product is part of the extensive N-channel 650 V, 0.090 Ω, 20 A MDmesh? M2 Power MOSFET series.

Key Features and Specifications

The STB30N65M2AG boasts of a number of impressive features and specifications that make it stand out in the industry. It has an extremely high operating voltage of 650 V which is clearly designed for high demand applications. Furthermore, the device sports a low on-resistance (RDS(on)) at 0.090 Ω. This ensures the efficient performance of the device with minimal power loss. The device can also accommodate a high current of 20 A, making it suitable in high-power applications.

Applications and Uses

The STB30N65M2AG has numerous applications that range across various sectors. Given its high voltage and current capacity, along with its low on-resistance, it is most suitable for high-frequency operations, such as switch mode power supplies (SMPS), lighting, welding, DC-DC converters, and High Voltage DC (HVDC) transmission systems.

  • Reliability and Durability

    STMicroelectronics has ensured that the STB30N65M2AG product is highly reliable and durable, especially under intense conditions. The device is characterized by high junction temperature capability that enhances performance under high thermal conditions. To top it all off, the product boasts of an avalanche ruggedness that makes it withstand high-energy pulses in the avalanche and commutation mode.

  • Package Information

    The STB30N65M2AG is made available in a TO-247 package. Apart from this, it also comes in various other packages, catering to different customer needs and requirements. By offering a range of packages, STMicroelectronics provides flexibility for the design and application of this Power MOSFET.

STMicroelectronics is the manufacturer of the STB30N65M2AG, which is available in stock at Nantian. The reference price for STB30N65M2AG can be found by referring to infineon tech or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the STB30N65M2AG datasheet PDF and pin diagram description that are available for download.

The STB30N65M2AG has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.

All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to STB30N65M2AG could be downloaded from Nantian's platform.

PackageTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SeriesAutomotive, AEC-Q101
RoHSRoHS
FET TypeN-Channel
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
FET Feature-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Product StatusActive
Vgs(th) (Max) @ Id4V @ 250μA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs180mOhm @ 10A, 10V
Power Dissipation (Max)190W (Tc)
Supplier Device PackageD2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs30.8 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds1440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
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