NVD5867NLT4G-3629913.jpg0.0000000000 NVD5867NLT4G-3629913.jpg 57043
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onsemi NVD5867NLT4G

   
Manufacturer Part Number : NVD5867NLT4G
Manufacturer : onsemi
Description : MOSFET N-CH 60V 6A/22A DPAK-3
Datasheet : NVD5867NLT4G.PDF NVD5867NLT4G PDF
EDA / CAD Models : NVD5867NLT4G by SnapEDA
Base Product Number : NVD5867
Stock Condition :In Stock 57043, New Original
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1780 1798 3629913 /datasheets/Discrete Semiconductor Products/NVD5867NLT4G-3629913.pdf onsemi/nvd5867nlt4g

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onsemi NVD5867NLT4G

In Stock: 57043   Qty:

The NVD5867NLT4G from onsemi is a high-performance power MOSFET specifically designed for applications requiring both low power loss and high current handling.  Its low on-resistance (RDS(on)) minimizes energy wasted during conduction, making it ideal for applications where efficiency is critical.  This component also boasts a significant current-carrying capacity, ensuring it can handle substantial loads without degradation.  Crucially, its avalanche energy specification and AEC-Q101 qualification provide reliability and robustness for demanding industrial and automotive environments.

ON Semiconductor NVD5867NLT4G mosfet chip

Nantian Electronics, a premier onsemi distributor, maintains a substantial stock of NVD5867NLT4G units.  We offer convenient access to detailed product information, including the datasheet, and provide comprehensive support to ensure smooth integration into your designs.  Contact us for a competitive quote and explore the possibilities of incorporating this reliable and high-performing component into your next project.

ON Semiconductor NVD5867NLT4G original reel label

TypeDescription
CategoryDiscrete Semiconductor Products Transistors - FETs, MOSFETs - Single 
Mfronsemi
Series-
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C6A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs39mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds675 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 43W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeSurface Mount
Supplier Device PackageDPAK-3
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product NumberNVD586


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