MJ11032G-6565928.jpg0.0000000000 MJ11032G-6565928.jpg 3700
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ON Semiconductor MJ11032G

   
Manufacturer Part Number : MJ11032G
Manufacturer : ON Semiconductor
Description : TRANS NPN DARL 120V 50A TO204
Datasheet : MJ11032G.PDF MJ11032G PDF
EDA / CAD Models : MJ11032G by SnapEDA
Base Product Number : MJ11032
Stock Condition :In Stock 3700, New Original
Quantity:
Delivery:
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1780 1791 6565928 /datasheets/Discrete Semiconductor Products/MJ11032G-6565928.pdf ON/MJ11032G

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ON Semiconductor MJ11032G

In Stock: 3700   Qty:

The ON Semiconductor MJ11032G is a high-current power transistor designed for robust and reliable switching applications.  Its impressive current gain, reaching a minimum of 1000 at 25 amps DC and 400 at 50 amps DC, makes it suitable for handling significant loads.  This robust component can handle pulsed currents up to 100 amps, further enhancing its versatility in demanding applications.Built with monolithic construction and incorporating a built-in base-emitter shunt resistor, the MJ11032G ensures stable performance and minimizes the need for additional external components.  The component's extended junction temperature rating of +200°C contributes to its high-power capability and resilience in demanding thermal environments.

ON Semiconductor MJ11032G transistor part

Nantian Electronics, a trusted ON Semiconductor distributor, proudly stocks a substantial inventory of MJ11032G transistors.  We offer immediate access to this high-performance component, along with comprehensive resources like the MJ11032G datasheet (PDF) and detailed pin diagrams.  Contact us today for a competitive quote on your MJ11032G purchase.

Don't hesitate to inquire about this product or place your order.  We are committed to providing the best possible pricing and service for all your electronic component needs.

ON Semiconductor MJ11032G part bottom

TypeDescription
CategoryDiscrete Semiconductor Products Transistors - Bipolar (BJT) - Single 
Mfronsemi/ON Semiconductor
Series-
PackagingTray
Part StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)120 V
Vce Saturation (Max) @ Ib, Ic3.5V @ 500mA, 50A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A, 5V
Power - Max300 W
Frequency - Transition-
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AE
Supplier Device PackageTO-204 (TO-3)
Base Product NumberMJ11032


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