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BSC046N02KS-G-6582125.jpg0.0000000000 BSC046N02KS-G-6582125.jpg 49580
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Infineon Technologies BSC046N02KS G

   
Manufacturer Part Number : BSC046N02KS G
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 20V 80A TDSON-8
Datasheet : BSC046N02KS G.PDF BSC046N02KS G PDF
EDA / CAD Models : BSC046N02KS G by SnapEDA
Base Product Number : BSC046
Stock Condition :In Stock 49580, New Original
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287 309 6582125 /datasheets/Discrete Semiconductor Products/BSC046N02KS-G-6582125.pdf Infineon-Technologies/BSC046N02KS-G

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Infineon Technologies BSC046N02KS G

In Stock: 49580   Qty:

The BSC046N02KS G by Infineon Technologies is a cutting-edge semiconductor device, specifically developed for more rapid switching converters and synchronous rectification. Designed with attention to speed and efficiency, this component is qualified according to JEDEC standards, making it suited for an array of target applications.

BSC046N02KS G

Notably, this device is optimized with super logic level 2.5V rating and is configured as an n-channel device, ensuring efficient performance in modern electronic requirements. One of its standout features is an excellent gate charge and low RDS(on) product (Figure of Merit – FOM), which combines low on-resistance for high-effort computing tasks, enhancing productivity while minimizing energy consumption. Furthermore, the BSC046N02KS G showcases superior thermal resistance, reducing risk of overheating in high-performance scenarios. Importantly, it has been evaluated for avalanche conditions, ensuring robust performance even under drastic voltage changes. Respectful of the current ecological demands, the device features lead-free plating and is RoHS compliant, and it aligns with IEC61249-2-21 standards as a halogen-free product.

Infineon Technologies BSC046N02KS G Package Dimensions:

BSC046N02KS-G-Package-Dimensions

As a professional distributor of Infineon Technologies, Nantian Electronics holds a large stock of the BSC046N02KS G and provides customers with its complete parameters, detailed datasheet PDF, and pin diagram instructions for download. This not only ensures ready availability of the product but also comprehensive support throughout its utilization.

Series:OptiMOS
Diode Configuration:MOSFET N-Channel, Metal Oxide
Diode Type:Logic Level Gate, 2.5V Drive
FET Type:20V
IGBT Type:19A (Ta), 80A (Tc)
Structure:4.6 mOhm @ 50A, 4.5V
Transistor Type:1.2V @ 110米A
Triac Type:27.6nC @ 4.5V
Type:4100pF @ 10V
Voltage:48W
Voltage - Breakover:-55~C ~ 150~C (TJ)
Voltage - Off State:Surface Mount
Voltage - Zener (Nom) (Vz):8-PowerTDFN
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