The GaN Systems GS66508T-MR is an advanced N-Channel GaN-on-Si power transistor designed for high-performance applications requiring efficient power switching and handling. This MOSFET offers a robust Vds (Drain-Source Breakdown Voltage) of 650V, making it suitable for industrial and automotive power systems where high voltage tolerance is essential. With a continuous drain current (Id) rating of 30A and a low drain-source resistance (Rds On) of 63 mOhms, the GS66508T-MR ensures minimal power loss and high efficiency in power conversion.
As a professional GaN Systems distributor, Nantian Electronics has a large number of GS66508T-MR in stock. We also provide GS66508T-MR parameters, GS66508T-MR Datasheet PDF and pin diagram instructions for download.
Features
Featuring a gate-source voltage (Vgs) range of -10V to +7V and a gate-source threshold voltage (Vgs th) of 1.1V, this transistor facilitates precise control and efficient switching operations. It includes a gate charge (Qg) of 6.1 nC, contributing to fast switching times with rise and fall times of 3.7 ns and 5.2 ns, respectively. Packaged in a compact GaNpx case suitable for surface-mount technology (SMD/SMT), the GS66508T-MR is ideal for compact designs and applications demanding high power density, reliability, and temperature resilience, operating effectively from -55°C to +150°C.
Applications
Industrial power systems
Automotive power systems
Power converters
Motor drives
Renewable energy systems
