The Fairchild Semiconductor FDD2582 is a high-performance N-channel power MOSFET designed to deliver efficient and reliable switching in a wide range of power management and conversion applications. With a drain-source voltage of 150 V and a continuous drain current of up to 21 A (Tc), it offers robust performance and high power density. The device exhibits a low on-resistance of just 58 mΩ (typical) at a gate-source voltage of 10 V, ensuring minimal conduction losses and improved energy efficiency. Its surface-mount TO-252AA package supports compact board layouts while maintaining excellent thermal characteristics, enabling high power dissipation up to 95 W (Tc).
Engineered for fast switching and low losses, the FDD2582 features a low total gate charge of 19 nC (typical) and a low Miller charge, which enhance switching efficiency and reduce power consumption in high-frequency circuits. The device also includes a low reverse recovery charge (QRR) body diode, ensuring better performance in applications requiring fast recovery and reduced switching noise. With its UIS (Unclamped Inductive Switching) capability for both single and repetitive pulses, the FDD2582 provides excellent ruggedness and reliability in demanding operating environments. This makes it an ideal choice for power supplies, DC-DC converters, motor drivers, and other high-efficiency switching systems.
As a professional Fairchild Semiconductor distributor, Nantian Electronics has a large electronic component part number of FDD2582 in stock. We also provide FDD2582 parameters, FDD2582 Datasheet (PDF), and pin diagram instructions for download. If you wanted to buy this part, you would contact with us. We will quote our best price to you. Welcome to inquiry and order!
