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The CRGMP15T120DF1A3 is a high-performance insulated gate bipolar transistor (IGBT) module from China Resources Microelectronics. Designed for 1200V applications, this module offers a robust current handling capacity of 15A at 100°C, making it suitable for various demanding power electronics systems. Key features include a low saturation voltage (VCE(sat)) of 1.8V, contributing to high efficiency, and a relatively low gate threshold voltage (VGE(th)) of 6V, which simplifies driving circuitry. The module's trench field-stop structure (Trench FS III technology) further enhances performance by minimizing conduction losses.
The CRGMP15T120DF1A3's low switching energy (Eoff) of 0.67mJ, combined with a forward voltage drop (VF) of 2.15V, allows for rapid switching and reduced energy consumption. Nantian Electronics, a trusted distributor of CR Micro products, maintains a substantial inventory of this component, ensuring quick delivery to meet your project needs. They also offer a comprehensive selection of other CR Micro components, providing a one-stop solution for your power electronics requirements.
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee:100% ESD anti-static protection, combined with high toughness and superior impact absorption.
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